STPSC12H065 650 V power Schottky silicon carbide diode Datasheet - production data Description . The SiC diode is an ultrahigh performance power . Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of . temperature. 2 & 7 Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge Features capability ensures a good robustness during No or negligible reverse recovery transient phases. Switching behavior independent of Table 1. Device summary temperature Symbol Value Dedicated to PFC applications High forward surge capability I 12 A F(AV) V 650 V RRM T (max) 175 C j July 2015 DocID024086 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPSC12H065 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) I Average forward current T = 130 C , = 0.5 12 A F(AV) c t = 10 ms sinusoidal, T = 25 C p c 100 Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 90 A FSM p c current 400 t = 10 s square, T = 25 C p c (1) I Repetitive peak forward current T = 130 C , T = 150 C, = 0.1 50 A FRM c j T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) dPtot 1 --------------- -------------------------- 2. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Value Symbol Parameter Unit Typ. Max. R Junction to case 1.00 1.4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -10 120 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 100 500 j T = 25 C -1.56 1.75 j (2) V Forward voltage drop I = 12 A V F F T = 150 C - 1.98 2.5 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.096 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 400 V, 36 nC cj R V = 0 V, T = 25 C, F = 1 MHz 600 R c C Total capacitance pF j V = 400 V, T = 25 C, F = 1 MHz 60 R c V OUT 1. Most accurate value for the capacitive charge: Q = c (v ).dv cj j R R 0 2/8 DocID024086 Rev 2