X-On Electronics has gained recognition as a prominent supplier of STPSC12H065D Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC12H065D Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC12H065D STMicroelectronics

STPSC12H065D electronic component of STMicroelectronics
STPSC12H065D STMicroelectronics
STPSC12H065D Schottky Diodes & Rectifiers
STPSC12H065D  Semiconductors

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See Product Specifications
Part No. STPSC12H065D
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: STMicroelectronics Schottky Diodes & Rectifiers
Datasheet: STPSC12H065D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
110: USD 2.353 ea
Line Total: USD 258.83 
Availability - 339
Ship by Fri. 09 May to Thu. 15 May
MOQ: 110  Multiples: 50
Pack Size: 50
Availability Price Quantity
339
Ship by Fri. 09 May to Thu. 15 May
MOQ : 110
Multiples : 50
110 : USD 2.353
150 : USD 2.327
250 : USD 2.314
500 : USD 2.2
1000 : USD 2.1625

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC12H065D from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC12H065D and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC12H065 650 V power Schottky silicon carbide diode Datasheet - production data Description . The SiC diode is an ultrahigh performance power . Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of . temperature. 2 & 7 Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge Features capability ensures a good robustness during No or negligible reverse recovery transient phases. Switching behavior independent of Table 1. Device summary temperature Symbol Value Dedicated to PFC applications High forward surge capability I 12 A F(AV) V 650 V RRM T (max) 175 C j July 2015 DocID024086 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPSC12H065 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) I Average forward current T = 130 C , = 0.5 12 A F(AV) c t = 10 ms sinusoidal, T = 25 C p c 100 Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 90 A FSM p c current 400 t = 10 s square, T = 25 C p c (1) I Repetitive peak forward current T = 130 C , T = 150 C, = 0.1 50 A FRM c j T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) dPtot 1 --------------- -------------------------- 2. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Value Symbol Parameter Unit Typ. Max. R Junction to case 1.00 1.4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -10 120 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 100 500 j T = 25 C -1.56 1.75 j (2) V Forward voltage drop I = 12 A V F F T = 150 C - 1.98 2.5 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.096 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 400 V, 36 nC cj R V = 0 V, T = 25 C, F = 1 MHz 600 R c C Total capacitance pF j V = 400 V, T = 25 C, F = 1 MHz 60 R c V OUT 1. Most accurate value for the capacitive charge: Q = c (v ).dv cj j R R 0 2/8 DocID024086 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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