STPSC15H12 Datasheet 1200 V, 15 A power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C to 175 C Low V F A A K ECOPACK2 compliant component K DO-247 LL TO-220AC Applications EV charging stations Solar boost converters PV converters Description The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low V Schottky diode structure F with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode Product label will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status STPSC15H12 Product summary I 15 A F(AV) V 1200 V RRM T (max.) 175 C j V (typ.) 1.35 V F DS11586 - Rev 4 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STPSC15H12 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 1200 V RRM j I Forward rms current 38 A F(RMS) (1) TO-220AC, T = 155 C, DC current C I Average forward current 15 A F(AV) (1) DO-247 LL, , T = 150 C, DC current C TO-220AC, T = 155 C, T = 175 C, = 0.1 58 C j I Repetitive peak forward current A FRM DO -247 LL, T = 150 C, T = 175 C, = 0.1 61 C j T = 25 C 105 C t = 10 ms sinusoidal p I T = 150 C Surge non repetitive forward current 90 A FSM C t = 10 s square T = 25 C 630 p C T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal parameters Typ. Max. Symbol Parameter Unit value value TO-220AC 0.45 0.6 R Junction to case C/W th(j-c) DO-247 LL 0.50 0.70 For more information, please refer to the following application note: AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7.5 90 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 45 600 j T = 25 C - 1.35 1.50 j (2) I = 15 A V Forward voltage drop V F F T = 150 C - 1.75 2.25 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.09 x I + 0.0775 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS11586 - Rev 4 page 2/12