STPSC2006CW 600 V power Schottky silicon carbide diode Features A1 No or negligible reverse recovery K A2 Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description A2 The SiC diode is an ultrahigh performance power K A1 Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material TO-247 STPSC2006CW allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal Table 1. Device summary capacitive turn-off behavior is independent of Symbol Value temperature. I 2 x 10 A F(AV) ST SiC diodes will boost the performance of PFC V 600 V RRM operations in hard switching conditions. T 175 C j (max) Q 12 nC C (typ) March 2011 Doc ID 018506 Rev 1 1/7 www.st.com 7Characteristics STPSC2006CW 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 18 A F(RMS) T = 115 C, = 0.5 Per diode 10 A c I Average forward current F(AV) T = 100 C, = 0.5 Per device 20 A c t = 10 ms sinusoidal, T = 25 C 40 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 32 A FSM p c current t = 10 s square, T = 25 C 160 p c I Repetitive peak forward current = 0.1, T = 110 C, T = 150 C 40 A FRM c j T Storage temperature range -55 to +175 C stg T Maximum operating junction temperature range -40 to +175 C j Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 2 C/W R Junction to case th(j-c) Total 1.2 C/W R Coupling 0.4 th(c) C/W Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -30 150 j Reverse leakage (1) I V = V A R R RRM current T = 150 C - 210 1500 j T = 25 C -1.4 1.7 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.6 2.1 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.2 x I + 0.09 x I F(AV) F (RMS) Table 5. Other parameters per diode Symbol Parameter Test conditions Typ. Unit V = 400 V, I = 10 A dI /dt = -200 A/s r F F Q Total capacitive charge 12 nC c T = 150 C j C Total capacitance V = 0 V, T = 25 C, F = 1 Mhz 650 pF r c 2/7 Doc ID 018506 Rev 1