STR2N2VH5 STMicroelectronics

STR2N2VH5 N-channel 20 V, 0.025 typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Datasheet production data Features Order code V R max I P DS DS(on) D TOT STR2N2VH5 20 V 0.03 (V =4.5 V) 2.3 A 0.35 W GS 3 Low on-resistance R DS(on) 2 High avalanche ruggedness 1 Low gate drive power loss SOT-23 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Table 1. Device summary Order code Marking Packages Packaging STR2N2VH5 STD1 SOT-23 Tape and reel July 2014 DocID023799 Rev 4 1/13 This is information on a product in full production. www.st.comContents STR2N2VH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID023799 Rev 4