STN1HNK60, STQ1HNK60R-AP Datasheet N-channel 600 V, 7.3 typ., 0.4 A SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages 4 Features 3 2 1 Order code V R max. I Package DS DS(on) D SOT-223 STN1HNK60 SOT-223 600 V 8.5 0.4 A STQ1HNK60R-AP TO-92 Extremely high dv/dt capability 100% avalanche tested 3 2 Gate charge minimized 1 TO-92 (Ammopack) D(2, 4) Applications Switching applications Description G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant S(3) reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Int schem nTnZ SOT 223 capability for the most demanding applications. Product status STN1HNK60 STQ1HNK60R-AP DS12594 - Rev 1 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STN1HNK60, STQ1HNK60R-AP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit SOT-223 TO-92 V Drain-source voltage 600 V DS V Drain-gate voltage (R = 20 k) 600 V DGR GS V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 0.4 A D C I Drain current (continuous) at T = 100 C 0.25 A D C (1) I Drain current (pulsed) 1.6 A DM P Total dissipation at T = 25 C 3.3 3 W TOT C (2) dv/dt Peak diode recovery voltage slope 3 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 0.4 A, di/dt 100 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit SOT-223 TO-92 R Thermal resistance junction-ambient 120 C/W thj-amb R Thermal resistance junction-lead 40 C/W thj-lead (1) R Thermal resistance junction-pcb 37.87 C/W thj-pcb 2 1. When mounted on FR-4 board of 1 in , 2 oz Cu, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 0.4 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 25 mJ AS j D AR DD DS12594 - Rev 1 page 2/16