STS10DN3LH5 Dual N-channel 30 V, 0.019 , 10 A, SO-8 STripFET V Power MOSFET Features Type V R max I DSS DS(on) D STS10DN3LH5 30 V 0.021 10 A R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) Very low switching gate charge SO-8 High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order codes Marking Package Packaging STS10DN3LH5 10DD3L SO-8 Tape and reel May 2009 Doc ID 15624 Rev 1 1/13 www.st.com 13 Contents STS10DN3LH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 15624 Rev 1