STS12N3LLH5 STMicroelectronics

STS12N3LLH5 N-channel 30 V, 0.0068 , 12 A, SO-8 STripFET V Power MOSFET Datasheet production data Features R DS(on) Type V I DSS D max 5 (1) STS12N3LLH5 30 V < 0.0075 12 A 8 1. The value is rated according R thj-pcb 4 R * Q industry benchmark 1 DS(on) g SO-8 Extremely low on-resistance R DS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Table 1. Device summary Order code Marking Package Packaging STS12N3LLH5 12D3L SO-8 Tape and reel June 2012 Doc ID 17152 Rev 3 1/13 This is information on a product in full production. www.st.com 13Contents STS12N3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 17152 Rev 3