STS13N3LLH5 STMicroelectronics

STS13N3LLH5 N-channel 30 V, 0.006 , 13 A, SO-8 STripFET V Power MOSFET Features Type V R I DSS DS(on) D 5 (1) STS13N3LLH5 30 V <0.0066 13 A 8 1. The value is rated according to R . thj-pcb R * Q industry benchmark DS(on) g 4 Extremely low on-resistance R DS(on) 1 Very low switching gate charge SO-8 High avalanche ruggedness Low gate drive power losses Applications Switching applications Figure 1. Internal schematic diagram Description This product is an N-channel Power MOSFET that th utilizes the 5 generation of design rules for STs proprietary STripFET technology. The lowest available R * Q , in SO-8 package, makes DS(on) g this device suitable for the most demanding DC- DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STS13N3LLH5 13D3L SO-8 Tape and reel June 2011 Doc ID 018965 Rev 1 1/12 www.st.com 12Contents STS13N3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/12 Doc ID 018965 Rev 1