STTH302S STMicroelectronics

STTH302S HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS I 3A F(AV) V 200 V RRM Tj (max) 175 C V (max) 0.75 V F trr (max) 35 ns FEATURES AND BENEFITS n Very low conduction losses SMC n Negligible switching losses n Low forward and reverse recovery times n High junction temperature DESCRIPTION The STTH302S, which is using STs new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Average forward current Tl = 107C =0.5 3 A F(AV) I Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A FSM T Storage temperature range - 65 + 175 C stg Tj Maximum operating junction temperature 175 C THERMAL PARAMETERS Symbol Parameter Maximum Unit R Junction to lead 20 C/W th (j-l) April 2002 - Ed: 1A 1/5STTH302S STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit I * Reverse leakage Tj = 25C V =V 3 A R R RRM current Tj = 125C 4 75 V ** Forward voltage drop Tj = 25C I = 3 A 0.95 V F F Tj = 125C I = 3 A 0.66 0.75 F Pulse test: * tp = 5ms, <2% ** tp = 380s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.60xI + 0.05 I F(AV) F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit trr Reverse recovery Tj = 25C I =1 A Irr = -50 A/s 35 ns F time V = 30V R tfr Forward recovery Tj = 25C I =3A dI /dt=50A/s 70 ns F F time V =1.1xV max FR F V Forward recovery Tj = 25C I =3A dI /dt=50A/s 1.6 V FP F F voltage 2/5