STTH3R02AFY STMicroelectronics

STTH3R02-Y Automotive ultrafast rectifier Datasheet - production data Description The STTH3R02-Y, implementing STs new 200 V planar technology, is especially suited for . switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications in automotive functions. Table 1. Device summary Symbol Value I 3 A F(AV) . V 200 V RRM T(max) 175 C j V (typ) 0.72 V F 62 )ODW T(typ) 16 ns rr Features Low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature AEC-Q101 qualified ECOPACK 2 compliant component PPAP capable February 2015 DocID027545 Rev 1 1/8 This is information on a product in full production. www.st.comCharacteristics STTH3R02-Y 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit T = -40 C V Repetitive peak reverse voltage 200 V j RRM I Average forward current, square waveform T = 109 C = 0.5 3 A F(AV) L t = 8.3 ms p I Surge current non repetitive forward current 80 A FSM sinusoidal T Storage temperature range -65 to + 175 C stg (1) T Operating temperature range -40 to + 175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Typ. Max. Unit R Junction to lead 15 23 C/W th(j-l) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 1.6 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 2 16 j T = 25 C 0.91 1.02 j (2) V Forward voltage drop I = 3A V F F T = 150 C 0.72 0.83 j 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.71 x I + 0.04 x I F(AV) F (RMS) 2/8 DocID027545 Rev 1