Product Information

STTH60AC06CW

STTH60AC06CW electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast Recovery 6000V 12pF Diode

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 6.0236 ea
Line Total: USD 6.02

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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STTH60AC06CW
STMicroelectronics

1 : USD 6.0236
10 : USD 3.9428

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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STTH60AC06C Turbo 2 ultrafast high voltage rectifier Datasheet production data Description This device uses ST Turbo 2 600 V technology and is specially suited for use as a boost diode in . air conditioning equipment as continuous mode interleaved power factor correction. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 1. Device summary Symbol Value I 2 x 30 A F(AV) V 600 V RRM 2 3 / 7 3) 2 7 t (typ) 40 ns rr V (typ) 1.4 V F T 175 C j 2 // 7 2 7 Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package TO-3PF: Insulated voltage: 2500 V DC March 2017 DocID024886 Rev3 1/13 This is information on a product in full production. www.st.com 13Characteristics STTH60AC06C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 50 A F(RMS) Per diode 30 I Average forward current A F(AV) Per device 60 t = 10 ms sinusoidal I Surge non repetitive forward current 280 A p FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 0.9 R Junction to case (TO3P-3L, TO-247, TO-247 LL) th(j-c) Total 0.55 R Coupling (TO3P-3L, TO-247, TO-247 LL) 0.2 th(c) C/W Per diode 2.8 R Junction to case (TO-3PF) th(j-c) Total 2.2 R Coupling (TO-3PF) 1.6 th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = V A R R RRM T = 150 C 40 400 j T = 25 C 1.75 j I = 30 A F T = 150 C 1.07 1.40 j (2) V Forward voltage drop V F T = 25 C 2 j I = 60 A F T = 150 C 1.32 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.1 x I + 0.01 I F(AV) F (RMS) 2/13 DocID024886 Rev3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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