Product Information

STTH810DI

STTH810DI electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast recovery high voltage diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 0.5279 ea
Line Total: USD 13.2

0 - Global Stock
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1

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STTH810DI
STMicroelectronics

1000 : USD 1.4936

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH810DI
STMicroelectronics

1 : USD 1.2308

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH810DI
STMicroelectronics

1 : USD 5.0797
10 : USD 4.4045
100 : USD 3.5398
500 : USD 2.9083
1000 : USD 2.4202

0 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH810DI
STMicroelectronics

1 : USD 3.431
10 : USD 1.859
100 : USD 1.7238
500 : USD 1.5437
1000 : USD 1.3244
5000 : USD 1.2919

0 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

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STTH810DI
STMicroelectronics

1000 : USD 1.3635
2000 : USD 1.2625
3000 : USD 1.2625
4000 : USD 1.2625

0 - WHS 6


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

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STTH810DI
STMicroelectronics

1 : USD 6.037
10 : USD 2.1797
100 : USD 1.7737
500 : USD 1.4745
1000 : USD 1.2501
2000 : USD 1.2074

0 - WHS 7


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH810DI
STMicroelectronics

1 : USD 1.624
3 : USD 1.316
10 : USD 1.148
17 : USD 0.966
47 : USD 0.91

0 - WHS 8


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 8
Multiples : 1

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STTH810DI
STMicroelectronics

8 : USD 1.3006
10 : USD 1.236
100 : USD 1.0689
500 : USD 1.0475

0 - WHS 9


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 25
Multiples : 25

Stock Image

STTH810DI
STMicroelectronics

25 : USD 0.5279
100 : USD 0.4967

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Recovery Time
Product
Features Of Semiconductor Devices
Max Load Current
Radiator Thickness
Kind Of Package
LoadingGif

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STTH810 Ultrafast recovery - high voltage diode Main product characteristics A K I 8 A F(AV) V 1000 V RRM T 175 C j V (typ) 1.30 V F t (typ) 47 ns rr A A K K Features and benefits TO-220AC TO-220FPAC Ultrafast, soft recovery STTH810D STTH810FP Very low conduction and switching losses High frequency and/or high pulsed current operation K High reverse voltage capability High junction temperature A A Insulated packages: NC TO-220Ins K Electrical insulation = 2500 V RMS 2 DPAK TO-220Ins Capacitance = 7 pF STTH810G STTH810DI TO-220FPAC Electrical insulation = 2500 V RMS Capacitance = 12 pF Order codes Description Part Number Marking The high quality design of this diode has produced a device with low leakage current, STTH810D STTH810D regularly reproducible characteristics and intrinsic STTH810G STTH810G ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH810G-TR STTH810G reliability. STTH810FP STTH810FP Such demanding applications include industrial STTH810DI STTH810DI power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/11 www.st.com 11Characteristics STTH810 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM 2 TO-220AC / D PAK / TO-220FPAC 30 I RMS forward current A F(RMS) TO-220AC Ins 20 2 TO-220AC / D PAK T = 130 C c I Average forward current, = 0.5 TO-220FPAC T = 75 C 8A F(AV) c TO-220AC Ins T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 100 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 60 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit 2 TO-220AC / D PAK 2.5 R Junction to case TO-220FPAC 5.8 C/W th(j-c) TO-220AC Ins 4.1 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 2 20 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 8 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.05 I F(AV) F (RMS) 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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