STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 typ., 7.5 A MDmesh M2 Power MOSFET in a DPAK, DPAK and TO-220 packages Features TAB TAB 3 V T max. R max. I 2 2 Order codes Package DS J DS(on) D 1 3 1 DPAK STB10N60M2 DPAK DPAK STD10N60M2 650 V 0.60 7.5 A DPAK TAB STP10N60M2 TO-220 Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 TO-220 100% avalanche tested Zener-protected D(2, TAB) Applications G(1) Switching applications Description S(3) AM01476v1 tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 4 - January 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB10N60M2, STD10N60M2, STP10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7.5 C I A D Drain current (continuous) at T = 100 C 4.9 C (1) I Drain current (pulsed) 30 A DM P Total power dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse limited by safe operating area. 2. I 7.5 A, di/dt 400 A/s, V peak < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK DPAK TO-220 R Thermal resistance, junction-to-case 1.47 C/W thJC (1) R Thermal resistance, junction-to-board 30 50 C/W thJB R Thermal resistance, junction-to-ambient 62.5 C/W thJA 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T max. J 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS9703 - Rev 4 page 2/27