STU13N65M2 STMicroelectronics

STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features R DS(on) Order code V I DS D max TAB STP13N65M2 TAB 650 V 0.43 10A STU13N65M2 3 2 1 3 2 Extremely low gate charge 1 TO-220 Excellent output capacitance (C ) profile IPAK oss 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications , TAB Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packaging STP13N65M2 TO-220 13N65M2 Tube STU13N65M2 IPAK December 2014 DocID026894 Rev 1 1/16 This is information on a product in full production. www.st.comContents STP13N65M2, STU13N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 TO-220, STP13N65M2 11 4.2 IPAK, STU13N65M2 . 13 5 Revision history . 15 2/16 DocID026894 Rev 1