Product Information

STW18N60DM2

Name: STW18N60DM2
Brand: STMicroelectronics
SKU: STW18N60DM2_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STW18N60DM2 electronic component of STMicroelectronics

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Datasheet

Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; TO247

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.623 ea
Line Total: USD 3.62

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Thu. 30 May MOQ : 1 Multiples : 1 STW18N60DM2 STMicroelectronics	1 : USD 7.884 10 : USD 2.8404 25 : USD 2.6892 100 : USD 2.3328 600 : USD 1.9872 1200 : USD 1.728

0 - WHS 2 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1 Multiples : 1 STW18N60DM2 STMicroelectronics	1 : USD 3.3249 3 : USD 2.9826 8 : USD 2.1758 20 : USD 2.0536

0 - WHS 3 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 30 Multiples : 30 STW18N60DM2 STMicroelectronics	30 : USD 1.4294 150 : USD 1.3448

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Additional Infomation About Product

STW18N60DM2 Datasheet N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package Features V R max. I Order code DS DS(on) D STW18N60DM2 600 V 0.295 12 A Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications G(1) Switching applications Description S(3) This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- AM01476v1 tab recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW18N60DM2 Product summary Order code STW18N60DM2 Marking 18N60DM2 Package TO-247 Packing Tube DS10964 - Rev 6 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW18N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D case I Drain current (continuous) at T = 100 C 7.6 A D case (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) di/dt Peak diode recovery current slope 1000 A/s (2) Peak diode recovery voltage slope 100 dv/dt V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range C stg 55 to 150 T Operating junction temperature range C j 1. Pulse width is limited by safe operating area. 2. I 12 A, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W R Thermal resistance junction-ambient 50 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 380 mJ AR (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10964 - Rev 6 page 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Technology Mdmesh Mdmesh
Polarisation Unipolar Unipolar
Case To247 To247
Mounting Tht Tht
Kind Of Package TUBE TUBE
Features Of Semiconductor Devices Esd Protected Gate Esd Protected Gate
Type Of Transistor N - Mosfet N - Mosfet
Drain Current 7.6 A 7.6 A
Gate-Source Voltage 25 V 25 V
Drain-Source Voltage 600 V 600 V
On-State Resistance 260 mOhms 260 mOhms
Power Dissipation 90 W 90 W