STW27N60M2-EP STMicroelectronics

STP27N60M2-EP, STW27N60M2-EP N-channel 600 V, 0.150 typ., 20 A MDmesh M2 EP Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max I DS DS(on) D STP27N60M2-EP 600 V 0.163 20 A STW27N60M2-EP 600 V 0.163 20 A 3 3 Extremely low gate charge 2 2 1 Excellent output capacitance (COSS) profile 1 Very low turn-off switching losses 100% avalanche tested TO-247 TO-220 Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Tailored for very high frequency converters (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STP27N60M2-EP TO-220 27N60M2EP Tube STW27N60M2-EP TO-247 December 2015 DocID028723 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STP27N60M2-EP, STW27N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 TO-247 package information ........................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028723 Rev 1