STD5N52K3, STF5N52K3, STU5N52K3 Datasheet N-channel 525 V, 1.2 typ., 4.4 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V R max. I Package DS DS(on) D STD5N52K3 DPAK STF5N52K3 525 V 1.5 4.4 A TO-220FP STU5N52K3 IPAK D(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance G(1) Improved diode reverse recovery characteristics Zener-protected Applications S(3) AM01475V1 Switching applications Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD5N52K3 STF5N52K3 STU5N52K3 DS6663 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N52K3, STF5N52K3, STU5N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK TO-220FP V Drain-source voltage 525 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 4.4 4.4 A D C (1) I Drain current (continuous) at T = 100 C 2.77 2.77 A D C (2) (1) I Drain current (pulsed) 17.6 17.6 A DM P Total dissipation at T = 25 C 70 25 W TOT C Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 12 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 4.4 A, di/dt 100 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK R Thermal resistance junction-case 1.79 5 1.79 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 2.2 A AR (2) E Single pulse avalanche energy 100 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS6663 - Rev 3 page 2/27