Product Information

STV200N55F3

Name: STV200N55F3
Brand: STMicroelectronics
SKU: STV200N55F3_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STV200N55F3 electronic component of STMicroelectronics

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MOSFET N-channel 55 V

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

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N/A

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 600 Multiples : 600 STV200N55F3 STMicroelectronics	600 : USD 4.1382 1200 : USD 3.5433	N/A

0 - WHS 2 MOQ : 1 Multiples : 1 STV200N55F3 STMicroelectronics	1 : USD 7.4412 10 : USD 6.683	N/A

0 - WHS 3 Multiples : 1 STV200N55F3 STMicroelectronics		N/A

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Additional Infomation About Product

STV200N55F3 N-channel 55 V, 1.8 m , 200 A, PowerSO-10 STripFET Power MOSFET Features R DS(on) (1) Type V I DSS D max 10 STV200N55F3 55 V < 2.5 m 200 A 1 1. Current limited by package PowerSO-10 Conduction losses reduced Low profile, very low parasitic inductance Application Figure 1. Internal schematic diagram and Switching applications connection diagram (top view) Description This n-channel enhancement mode Power MOSFET is the latest refinement of STs STripFET process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV200N55F3 200N55F3 PowerSO-10 Tape and reel March 2009 Rev 3 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Contents STV200N55F3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 200 A 200 A
Vds - Drain-Source Breakdown Voltage 55 V 55 V
Rds On - Drain-Source Resistance 1.8 Ohms 1.8 Ohms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 300 W 300 W
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10 POWERSO - 10
Packaging Reel Reel
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode Enhancement Enhancement
Configuration Single Quad Source Single Quad Source
Series Stv200n55f3 Stv200n55f3
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 50 ns 50 ns
Rise Time 150 ns 150 ns
Factory Pack Quantity : 600 600
Typical Turn-Off Delay Time 110 ns 110 ns
Typical Turn-On Delay Time 25 ns 25 ns