STW2040 STMicroelectronics

STW2040 High voltage fast-switching NPN power transistor . Features High voltage capability High DC current gain Minimum lot to lot spread for reliable operation Application 3 2 1 Switching mode power supplies TO-247 Description Figure 1. Internal schematic diagram The STW2040 is manufactured using diffused collector in planar technology adopting base island layout. Table 1. Device summary Order code Marking Package Packaging STW2040 W2040 TO-247 Tube June 2009 Doc ID 15149 Rev 2 1/10 www.st.com 10 Obsolete Product(s) - Obsolete Product(s) Absolute maximum ratings STW2040 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES CE V Collector-emitter voltage (I = 0) 500 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 20 A C I Collector peak current 30 A CM I Base current 7 A B I Base peak current 10 A BM P Total dissipation at T = 25 C 125 W TOT c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1 C/W thJC 2/10 Doc ID 15149 Rev 2 Obsolete Product(s) - Obsolete Product(s)