STW26NM50 STMicroelectronics

STW26NM50 N-channel 500 V, 0.10 , 30 A TO-247 MDmesh Power MOSFET Features R DS(on) Type V I DSS D max STW26NM50 500 V < 0.12 30 A High dv/dt and avalanche capabilities 3 Improved ESD capability 2 1 Low input capacitance and gate charge TO-247 Application Switching applications Description Figure 1. Internal schematic diagram MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low on- resistance, high dv/dt capability and excellent avalanche characteristics. 3 - V Table 1. Device summary Order codes Marking Package Packaging STW26NM50 W26NM50 TO-247 Tube October 2009 Doc ID 8291 Rev 11 1/12 www.st.com 12 Contents STW26NM50 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 8291 Rev 11