STW26NM60N STMicroelectronics

STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) D STW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 Low gate input resistance 2 1 Applications Switching applications TO-247 Description This device is an N-channel Power MOSFET Figure 1: Internal schematic diagram developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the D(2) companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. G(1) S(3) AM01475v1 noTab noZen Table 1: Device summary Order code Marking Package Packaging STW26NM60N 26NM60N TO-247 Tube December 2016 DocID025246 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STW26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID025246 Rev 2