STW29NK50Z N-CHANNEL 500 V - 0.105 - 31A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE V R I P DSS DS(on) D W STW29NK50Z 500 V < 0.13 31 A 350 W TYPICAL R (on) = 0.105 DS EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 2 VERY GOOD MANUFACTURING 1 REPEATIBILITY TO-247 DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established Figure 2: Internal Schematic Diagram strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES WELDING MACHINES LIGHTING Table 2: Order Codes PART NUMBER MARKING PACKAGE PACKAGING STW29NK50Z W29NK50Z TO-247 TUBE Rev. 1 October 2004 1/10 Obsolete Product(s) - Obsolete Product(s)STW29NK50Z Table 3: Absolute Maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0) DS GS 500 V V Drain-gate Voltage (R = 20 K) DGR GS 500 V VGS Gate- source Voltage 30 V Drain Current (continuous) at T = 25C 31 I A D C I Drain Current (continuous) at T = 100C 19.5 A D C I (*) Drain Current (pulsed) 124 A DM P Total Dissipation at T = 25C 350 W TOT C Derating Factor 2.77 W/C VESD(G-S) Gate source ESD (HBM-C = 100pF, R = 1.5 K) 6000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Storage Temperature stg -55 to 150 C T Operating Junction Temperature j (*) Pulse width limited by safe operating area (1) I 31 A, di/dt 200 A/s, V V , T T SD DD (BR)DSS J JMAX Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 0.36 C/W Rthj-amb Thermal Resistance Junction-ambient Max 50 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 31 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 550 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: Gate-Source Zener Diode Symbol Parameter Test Condition Min. Typ. Max Unit BV Gate-Source Breakdown 30 A GSO Igs= 1mA (Open Drain) Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 Obsolete Product(s) - Obsolete Product(s)