STW48N60M2 STMicroelectronics

STW48N60M2 Datasheet N-channel 600 V, 60 m typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Features V T R max. I Order code DS Jmax. DS(on) D STW48N60M2 650 V 70 m 42 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 100% avalanche tested TO-247 Zener-protected D(2, TAB) Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(3) AM01475V1 suitable for the most demanding high efficiency converters. Product status STW48N60M2 Device summary Order code STW48N60M2 Marking 48N60M2 Package TO-247 Packing Tube DS10379 - Rev 4 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW48N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 42 A D C I Drain current (continuous) at T = 100 C 26 A D C (1) I Drain current (pulsed) 168 A DM P Total power dissipation at T = 25 C 300 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 42 A, di/dt 400 A/s V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.42 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 7 A AR (pulse width limited by T ) jmax. Single pulse avalanche energy E 1 J AS (starting T = 25 C, I = I V = 50 V) j D AR DD DS10379 - Rev 4 page 2/12