STW54NM65ND STMicroelectronics

STW54NM65ND N-channel 650 V, 0.055 typ., 49 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package Datasheet production data Features V R DSS DS(on) Order code I D ( Tjmax) max. STW54NM65ND 710 V < 0.065 49 A The worldwide best R * area amongst the DS(on) 3 fast recovery diode devices 2 1 100% avalanche tested TO-247 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Application Figure 1. Internal schematic diagram Switching applications Description The device is an N-channel FDmesh II Power MOSFET that belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- 3 recovery body diode. It is therefore strongly recommended for bridge topologies, in particular - V ZVS phase-shift converters. Table 1. Device summary Order code Marking Package Packaging STW54NM65ND 54NM65ND TO-247 Tube December 2012 Doc ID 018885 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STW54NM65ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 018885 Rev 2