STW48NM60N STMicroelectronics

STW48NM60N N-channel 600 V, 0.055 typ., 44 A MDmesh II Power MOSFET in a TO-247 package Datasheet production data Features V R DSS DS(on) Order codes I D T max Jmax STW48NM60N 650 V < 0.07 44 A 100% avalanche tested 3 2 1 Low input capacitance and gate charge Low gate input resistance TO-247 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STW48NM60N 48NM60N TO-247 Tube February 2013 Doc ID 18313 Rev 5 1/13 This is information on a product in full production. www.st.com 13Contents STW48NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 18313 Rev 5