STW55NM60ND STMicroelectronics

STW55NM60ND N-channel 600 V, 0.047 typ., 51 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package Datasheet production data Features V R DSS DS(on) Type I D ( T max) max J STW55NM60ND 650 V < 0.060 51 A The worldwide best R amongst the fast DS(on) recovery diode devices in TO-247 3 2 100% avalanche tested 1 TO-247 Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities Application Figure 1. Internal schematic diagram Switching applications Description This FDmesh II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on- resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order code Marking Package Packaging STW55NM60ND 55NM60ND TO-247 Tube December 2012 Doc ID 14169 Rev 3 1/12 This is information on a product in full production. www.st.com 12Contents STW55NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 14169 Rev 3