STW74NF30 STMicroelectronics

STW74NF30 Datasheet N-channel 300 V, 35 m typ., 60 A STripFET II Power MOSFET in a TO 247 package Features V R max. I Order code DS DS(on) D STW74NF30 300 V 45 m 60 A Exceptional dv/dt capability 3 2 100% avalanche tested 1 Low gate charge TO-247 Applications D(2) Switching applications Description G(1) This Power MOSFET series realized with STMicroelectronics unique STripFET process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC S(3) converters. AM01475v1 noZen noTab Product status link STW74NF30 Product summary Order code STW74NF30 Marking 74NF30 Package TO-247 Packing Tube DS12794 - Rev 1 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW74NF30 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 300 V DS V Gate-source voltage 20 V GS I Drain current (continuous) at T = 25 C 60 A D C I Drain current (continuous) at T = 100 C 37.8 A D C (1) I Drain current (pulsed) 240 A DM P Total power dissipation at T = 25 C 320 W TOT C (2) dv/dt Peak diode recovery voltage slope 12 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 60 A, di/dt 200 A/s V 80% V . SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.39 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non- repetitive I 50 A AR (pulse width limited by T ) jmax. Single pulse avalanche energy E 400 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12794 - Rev 1 page 2/13