Product Information

STW7N105K5

STW7N105K5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 4.3842 ea
Line Total: USD 13.15

174 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
69 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4
Multiples : 1

Stock Image

STW7N105K5
STMicroelectronics

4 : USD 2.243
10 : USD 2.1145
25 : USD 1.905
100 : USD 1.9
250 : USD 1.862

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 typ., 4 A MDmesh K5 Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data TAB Features TAB Order code V R max. I P DS DS(on) D TOT 3 STP7N105K5 2 IPAK 1 STU7N105K5 1050 V 2 4 A 110 W STW7N105K5 3 TO-220 2 1 Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected 3 2 TO-247 1 Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(1) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1: Device summary Order code Marking Package Packaging STP7N105K5 TO-220 STU7N105K5 7N105K5 IPAK Tube STW7N105K5 TO-247 October 2016 DocID026183 Rev 2 1/18 www.st.com This is information on a product in full production. Contents STP7N105K5, STU7N105K5, STW7N105K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 package information ........................................................... 11 4.2 IPAK package information ............................................................... 13 4.3 TO-247 package information ........................................................... 15 5 Revision history ............................................................................ 17 2/18 DocID026183 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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