STY100NM60N STMicroelectronics

STY100NM60N N-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet production data Features V DSS Type R max I DS(on) D T Jmax STY100NM60N 650 V < 0.029 98 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance Max247 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order code Marking Package Packaging STY100NM60N 100NM60N Max247 Tube November 2012 Doc ID 022225 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STY100NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 022225 Rev 2