STY112N65M5 STMicroelectronics

STY112N65M5 N-channel 650 V, 0.019 , 96 A, MDmesh V Power MOSFET in Max247 package Datasheet production data Features V DSS Order code R max I DS(on) D T jMAX STY112N65M5 710 V < 0.022 96 A Higher V rating DSS Higher dv/dt capability 3 2 Excellent switching performance 1 Easy to drive Max247 100% avalanche tested Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior 3 power density and outstanding efficiency. - V Table 1. Device summary Order code Marking Package Packaging STY112N65M5 112N65M5 Max247 Tube May 2012 Doc ID 15321 Rev 3 1/ This is information on a product in full production. www.st.com 12Contents STY112N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/ Doc ID 15321 Rev 3