T835H-8G Datasheet 2 8 A - 800 V - 150 C 8H Triac in D PAK Features A2 8 A medium current Triac 800 V symmetrical blocking voltage G 150 C maximum junction temperature T j Three triggering quadrants A1 High noise immunity - static dV/dt A2 Robust dynamic turn-off commutation - (dl/dt)c ECOPACK2 compliant component Molding resin UL94-V0 flammability certified Applications A2 A1 General purpose AC line load control G AC induction and universal motor control Lighting and automation I/O control DPAK Water heater, room heater and coffee machine Home automation smart AC plug Inrush current limiter in AC DC rectifiers Description Specifically designed to operate at 800 V and 150 C, the T835H-8G Triac housed in Product status link 2 D PAK provides an enhanced thermal management: this 8 A Triac is the right choice for a compact drive of AC loads and enables the heatsink size reduction. T835H-8G 2 D PAK package is ideal for compact SMD designs on surface mount boards or Product summary insulated metal substrate boards. I 8 A T(RMS) Based on the ST high temperature Snubberless technology, it offers higher specified turn off commutation and noise immunity levels up to the T max. j V /V 800 V DRM RRM The T835H-8G safely optimizes the control of the hardest universal motors, heaters V /V 900 V DSM RSM and inductive loads for industrial control and home appliances. I 35 mA GT Snubberless is a trademark of STMicroelectronics. T max. 150 C j DS13570 - Rev 2 - December 2020 www.st.com For further information contact your local STMicroelectronics sales office. T835H-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 139 C RMS on-state current (full sine wave) 8 A T(RMS) c t = 16.7 ms 84 Non repetitive surge peak on-state current (full cycle, I A TSM T initial = 25 C) j t = 20 ms 80 2 2 2 t = 10 ms 42 I t I t value for fusing p A s Critical rate of rise of on-state current, I = 2 x I , tr G GT dl/dt T = 25 C 100 A/s j 100 ns, f = 100 Hz V /V Repetitive peak off-state voltage 800 V DRM RRM V /V t = 10 ms, T = 25 C Non Repetitive peak off-state voltage 900 V DSM RSM p j I Peak gate current 4 A GM t = 20 s, T = 150 C p j P Maximum gate power dissipation 5 W GM P T = 150 C Average gate power dissipation 1 W G(AV) j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants Value Unit Min. 5 mA I V = 12 V, R = 30 I - II - III GT D L Max. 35 mA V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = V , R = 3.3 k T = 150 C I - II - III Min. 0.15 V GD D DRM L j I - III Max. 50 mA I I = 1.2 x I L G GT II Max. 80 mA (1) I I = 500 mA, gate open Max. 35 mA H T (1) V = V = 536 V, gate open T = 150 C Min. 2000 V/s dV/dt D R j (1) Without snubber network T = 150 C Min. 8 A/ms (dl/dt)c j 1. For both polarities of A2 referenced to A1. DS13570 - Rev 2 page 2/12