TMBAT49FILM STMicroelectronics

TMBAT49 Small signal Schottky diode Features very low turn-on voltage fast switching Description The TMBAT49 is a general purpose metal to silicon diode. This device has integrated MELF protection against excessive voltage such as (glass) electrostatic discharges. November 2010 Doc ID 3484 Rev 2 1/6 www.st.com 6Characteristics TMBAT49 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 80 V RRM I Forward continuous current T = 70 C 500 mA F j t = 1 s p I Repetitive peak forward current 3A FRM 0.5 I Surge non repetitive forward current t = 10 ms 10 A FSM p T Storage temperature range - 65 to +150 C stg T Operating junction temperature range - 65 to +125 C j T Maximum lead soldering temperature during 15 s 260 C L Table 2. Thermal parameter Symbol Parameter Value Unit R Junction to lead 110 C/W th(j-l) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (1) I Reverse leakage current T = 25 C V = 80 V - - 200 A R j R I = 10 mA - - 0.32 F (1) V Forward voltage drop T = 25 C I = 100 mA - - 0.42 V F j F I = 1 A - - 1 F 1. Pulse test: t 300 s, < 2% p Table 4. Dynamic characteristics (T = 25 C) j Symbol Parameter Test conditions Min. Typ. Max. Unit V = 0 V - 120 - R C Diode capacitance F = 1 MHz pF V = 5 V - 35 - R 2/6 Doc ID 3484 Rev 2