TMMBAT48FILM STMicroelectronics

TMMBAT 47 TMMBAT 48 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring MINIMELF very low turn-on voltage and fast switching. (Glass) These devices have integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol Parameter TMMBAT47 TMMBAT48 Unit V Repetitive Peak Reverse Voltage 20 40 V RRM I Forward Continuous Current T = 25 C 350 mA F l I Repetitive Peak Fordward Current t 1s 1A FRM p 0.5 I Surge non Repetitive Forward Current t = 10ms 7.5 A FSM p t = 1s 1.5 p P Power Dissipation T = 25 C 330 mW tot l T Storage and Junction Temperature Range - 65 to 150 C stg T - 65 to 125 j C T Maximum Temperature for Soldering during 15s 260 C L THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-leads 300 C/W th(j-l) August 1999 Ed: 1A 1/5TMMBAT 47/TMMBAT 48 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V T = 25CI = 10A TMMBAT47 20 V BR j R T = 25CI = 25A TMMBAT48 40 j R V I * T = 25C = 0.1mA All Types 0.25 V F j F I = 1mA 0.3 T = 25C F j T = 25 C I = 10mA 0.4 F j T = 25C I = 30mA TMMBAT47 0.5 j F T = 25C I = 150mA 0.8 j F I = 300mA 1 T = 25C j F I = 50mA TMMBAT48 0.5 T = 25C F j T = 25 C I = 200mA 0.75 F j T = 25C I = 500mA 0.9 j F I * T = 25C V = 1.5V All Types 1 A R j R T = 60C 10 j V = 10V TMMBAT47 4 T = 25C R j 20 Tj = 60C T = 25C V = 20V 10 j R T = 60C 30 j T = 25C V = 10V TMMBAT48 2 j R 15 T = 60C j V = 20V 5 Tj = 25C R T = 60 C 25 j T = 25C V = 40V 25 j R T = 60C 50 j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C f = 1MHz 20 pF T = 25CV = 0V j R T 12 = 25CV = 1V j R t T = 25C I = 10mA V = 1V i = 1mA R = 100 10 ns rr j F R rr L * Pulse test: tp 300s < 2%. 2/5