X-On Electronics has gained recognition as a prominent supplier of TN1610H-6T SCRs across the USA, India, Europe, Australia, and various other global locations. TN1610H-6T SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TN1610H-6T STMicroelectronics

TN1610H-6T electronic component of STMicroelectronics
TN1610H-6T STMicroelectronics
TN1610H-6T SCRs
TN1610H-6T  Semiconductors

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See Product Specifications
Part No. TN1610H-6T
Manufacturer: STMicroelectronics
Category: SCRs
Description: STMicroelectronics SCRs
Datasheet: TN1610H-6T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.428 ea
Line Total: USD 1.43 
Availability - 79
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 1
Multiples : 1
1 : USD 2.257
10 : USD 1.8848
30 : USD 1.1348
100 : USD 0.979
500 : USD 0.9093
1000 : USD 0.8782
2000 : USD 0.869

79
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 1.428
3 : USD 1.1018
10 : USD 0.973
23 : USD 0.84
62 : USD 0.798

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN1610H-6T from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1610H-6T and other electronic components in the SCRs category and beyond.

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TN1610H-6T Datasheet High temperature 16 A 600 V TO220 thyristor SCRs Features A High junction temperature: T = 150 C j High noise immunity dV/dt = 1000V/s up to 150 C Gate triggering current I = 10 mA GT G Peak off-state voltage V /V = 600 V DRM RRM K High turn-on current rise dI/dt = 100 A/s A ECOPACK 2 compliant Applications K Motorbike voltage regulator circuits A G Inrush current limiting circuits Motor control circuits and starters TO-220AB Solid state relays Description Thanks to a junction temperature T up to 150 C and a non-isolated TO-220 j package, the TN1610H-6T offers high thermal performance operation up to 16 A rms. The trade-off between the devices noise immunity (dV/dt = 1 kV/s), its gate triggering current (I = 10 mA) and its turn-on current rise (dI/dt = 100 A/s) allows GT the design of robust and compact control circuits for voltage regulators in motorbikes Product status and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. TN1610H-6T Product summary Order code TN1610H-6T Package TO-220AB V /V 600 V DRM RRM I 10 mA GT DS10821 - Rev 2 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.TN1610H-6T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I T = 133 C RMS on-state current (180 conduction angle) 16 A T(RMS) c T = 133 C 10 c I T = 138 C Average on-state current (180 conduction angle) 8 A T(AV) c T = 142 C 6 c t = 8.3 ms 153 p I Non repetitive surge peak on-state current (T initial = 25 C) A TSM j t = 10 ms 140 p 2 2 2 I t value for fusing, (T initial = 25 C) t = 10 ms 98 I t p A s j I = 2 x I , tr 100 ns G GT dl/dt f = 60 Hz 100 A/s Critical rate of rise of on-state current V /V Repetitive peak off-state voltage 600 V DRM RRM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C l Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Typ. 4.5 I mA GT V = 12 V, R = 33 Max. 10 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 30 mA H T I I = 1.2 x I Max. 60 mA L G GT dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j t I = 32 A, V = 600 V, I = 100 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt T D G G t I = 32 A, V = 402 V, (dl /dt)OFF = 30 A/s, V = 25 V, dV /dt = 40 V/s T = 150 C Typ. 70 s q T D T R D j DS10821 - Rev 2 page 2/11

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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