TN2010H-6G High temperature 20 A SCRs Datasheet - production data A Applications Motorbike voltage regulator circuits G Inrush current limiting circuits Motor control circuits and starters K Light dimmers A Solid state relays Description A K This device offers high thermal performance G during operation of up to 20 A , thanks to a RMS junction temperature of up to 150 C. DPAK Its DPAK package allows modern SMD designs as well as compact back to back configuration. Features The combination of noise immunity and low gate High junction temperature: T = 150 C j triggering current allows to design strong and High noise immunity dV/dt = 400 V/s up to compact control circuits. 150 C Table 1: Device summary Gate triggering current I = 10 mA GT Peak off-state voltage VDRM/VRRM = 600 V Order code Package VDRM/VRRM IGT High turn on current rise dI/dt = 100 A/s TN2010H-6G DPAK 600 V 10 mA ECOPACK 2 compliant component August 2017 DocID030740 Rev 1 1/10 www.st.com This is information on a product in full production. Characteristics TN2010H-6G 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I T = 132 C 20 A T(RMS) c (180 conduction angle) T = 132 C 12.7 c Average on-state current IT(AV) Tc = 137 C 10 A (180 conduction angle) T = 140 C 8 c tp = 8.3 ms 197 Non repetitive surge peak on-state current I A TSM (Tj initial = 25 C) t = 10 ms 180 p 2 2 2 I t I t value for fusing tp = 10 ms 162 A s Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms 700 V I Peak gate current t = 20 s T = 150 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 150 C 1 W V Maximum peak reverse gate voltage 5 V RGM Tstg Storage junction temperature range -40 to +150 C T Operating junction temperature range -40 to +150 C j Table 3: Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Typ. 5 I mA GT VD = 12 V, RL = 33 Max. 10 V Max. 1.3 V GT VGD VD = VDRM, RL = 3.3 k Tj = 150 C Min. 0.1 V I I = 500 mA, gate open Max. 40 mA H T IL IG = 1.2 x IGT Max. 60 mA dV/dt V = 402 V, gate open T = 150 C Min. 400 V/s D j tgt ITM = 40 A, VD = 402 V, IG = 20 mA, (dIG/dt) max = 0.2 A/s Typ. 1.9 s I = 40 A, V = 402 V, (d /dt)off = 30 A/s, V = TM D I R tq Tj = 150 C Typ. 70 s 25 V, dV /dt = 40 V/s D 2/10 DocID030740 Rev 1