Product Information

TN22-1500T

TN22-1500T electronic component of STMicroelectronics

Datasheet
STMicroelectronics SCRs STARTLIGHT

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.261 ea
Line Total: USD 1.26

43 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
43 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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TN22-1500T
STMicroelectronics

1 : USD 1.261
5 : USD 1.157
18 : USD 0.91
50 : USD 0.858
100 : USD 0.819

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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TN22 Fluorescent tube lamp starter SCR Datasheet - production data Description 1 2, TAB The TN22 has been specifically developed for use in fluorescent tube lamp electronic starter 3 circuits. TAB TAB Used in conjunction with a sensitive SCR, it provides high energy striking characteristics with low triggering power. 1 Thanks to the optimized characteristics of the 2 IPAK TN22, starters offer high reliability levels and 3 3 TO-220AB 2 extended life time of the fluorescent tube lamps. 1 Features High clamping voltage structure (1200to1500V) Low gate triggering current for direct drive from line ( < 1.5 mA) High holding current ( > 175 mA), ensuring high striking energy January 2016 DocID3768 Rev 5 1/14 This is information on a product in full production. www.st.comCharacteristics TN22 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak off-state voltage T = 110 C 400 V DRM j On-state RMS current I T = 95 C 2 A T(RMS) c full sine wave (180 conduction angle) Mean on-state current I T = 95 C 1.8 A T(AV) c Full sinewave (180 conduction angle) t = 8.3 ms 22 Non repetitive surge peak on-state current p I A TSM (T initial = 25 C) j t = 10 ms 20 p 2 2 2 ItI t Value for fusing t = 10 ms 2 A s p Critical rate of rise of on-state current dl/dt 50 A/s I = 5 mA dI /dt = 70 mA/s G G P Average gate power dissipation 300 mW G(AV) P Peak gate power dissipation t = 20 s 2 W GM p I Peak gate current t = 20 s 1 A GM p V Maximum peak reverse gate voltage 6 V RGM -40 to +150 T stg Storage and operating junction temperature range C T -40 to +110 j Maximum lead temperature for soldering during 10 s at 4.5 mm T 260 C L from case Table 2. Electrical characteristics (T = 25 C unless otherwise stated) j Symbol Test conditions Value Unit I V =12 V (DC), R = 33 Max. 1.5 mA GT D L V V =12 V (DC), R = 33 R = 1 K Max. 3 V GT D L GK I V = 0 V Min. 175 mA H GK dV/dt Linear slope up to V = 67% V V = 0 V, T = 110 C Min. 500 V/s D DRM, GK j Min. 1200 V I = 5 mA, V = 0 V V BR D GK Max. 1500 Table 3. Static electrical characteristics (T = 25 C unless otherwise stated) j Symbol Test conditions Value Unit V I = 2 A t = 380 s Max. 3.1 V TM TM p I V rated Max. 0.1 mA DRM DRM 2/14 DocID3768 Rev 5

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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