TN2540-800G-TR STMicroelectronics

TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs Datasheet - production data Features A On-state rms current, I 25 A T(RMS) Repetitive peak off-state voltage, V /V DRM RRM 600 to 1200 V G Triggering gate current, I 40 mA GT K Insulated package TO-220AB ins A Insulating voltage 2500 V rms UL1557 certified (file ref. E81734) A Description G K TO-220AB These standard 25 A SCRs are suitable for A general purpose applications. G A K DPAK Using clip assembly technology, they provide a G superior performance in surge current capabilities. TXN625RG is packaged in TO-220AB ins. K TO-220AB Insulated A G Table 1. Device summary Voltage V /V DRM RRM Sensitivity Order code Package I GT 600 V 800 V 1200 V 2 TN2540-600G-TR Y 40 mA D PAK 2 TN2540-800G-TR Y 40 mA D PAK TXN625RG Y 40 mA TO-220AB ins TYN625RG Y 40 mA TO-220AB TYN825RG Y 40 mA TO-220AB TYN1225RG Y 40 mA TO-220AB August 2014 DocID7478 Rev 9 1/11 This is information on a product in full production. www.st.comCharacteristics TN2540, TXN625, TYN625, TYN825, TYN1225 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220AB, T = 100 C 2 c D PAK I On-state rms current (180 Conduction angle) 25 A T(RMS) TO-220AB ins T = 83 C c I Average on-state current (180 Conduction angle) T = 100 C 16 A T(AV) c t = 8.3 ms 314 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 300 p 2 2 2 ItI t Value for fusing t = 10 ms T = 25 C 450 A S p j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical Characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit MIN. 4 I mA GT V = 12 V R = 33 MAX. 40 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 50 mA H T I I = 1.2 x I MAX. 90 mA L G GT dV/dt V = 67% V Gate open T = 125 C MIN. 1500 V/s D DRM j V I = 50 A tp = 380 s T = 25 C MAX. 1.6 V TM TM j V Threshold voltage T = 125 C MAX. 0.77 V t0 j R Dynamic resistance T = 125 C MAX. 14 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 4 mA j 2/11 DocID7478 Rev 9