Product Information

TYN840RG

TYN840RG electronic component of STMicroelectronics

Datasheet
Thyristor; 800V; 25A; 40A; 35mA; Package: tube; THT; TO220AB

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4098 ea
Line Total: USD 2.41

19996 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19996 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

TYN840RG
STMicroelectronics

1 : USD 2.4098
10 : USD 2.366
25 : USD 2.2288
100 : USD 2.0371
250 : USD 2.0056
500 : USD 1.9866
1000 : USD 1.9469
2000 : USD 1.9469
5000 : USD 1.9469

48 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

TYN840RG
STMicroelectronics

1 : USD 7.449
3 : USD 6.708
4 : USD 5.135
9 : USD 4.862

679 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 14
Multiples : 1

Stock Image

TYN840RG
STMicroelectronics

14 : USD 2.94

363 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 15
Multiples : 1

Stock Image

TYN840RG
STMicroelectronics

15 : USD 6.1623
25 : USD 5.9754
50 : USD 5.8559

19996 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 6
Multiples : 1

Stock Image

TYN840RG
STMicroelectronics

6 : USD 2.4098
10 : USD 2.366
25 : USD 2.2288
100 : USD 2.0371
250 : USD 2.0056
500 : USD 1.9866
1000 : USD 1.9469

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
LoadingGif

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TYN640, TYN840 40 A standard SCRs Datasheet - production data Description A These standard SCRs are suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power G motor control circuits. Using clip assembly technology, they provide a K superior performance in high surge current A capabilities. Table 1. Device summary Order code Voltage Sensitivity TYN640RG 600 V 35 mA K A TYN840RG 800 V 35 mA G TO-220AB Features On-state rms current, I 40 A T(RMS): Repetitive peak off-stat voltage, V , V : DRM RRM 600 V 800 V Triggering gate current, I : 35 mA GT November 2013 DocID6944 Rev 6 1/8 This is information on a product in full production. www.st.comCharacteristics TYN640, TYN840 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 95 C 40 A T(RMS) c IT Average on-state current (180 conduction angle) T = 95 C 25 A (AV) c t = 8.3 ms 480 p Non repetitive surge peak on-state I T = 25 C A TSM j current t = 10 ms 460 p 2 ItI t Value for fusing t = 10 ms T = 25 C 1060 A S p j Critical rate of rise of on-state current T = 125 j dI/dt F = 60 Hz 50 A/s I = 2 x I , t 100 ns C G GT r T = 125 j I Peak gate current t = 20 s 4A GM p C T = 125 j P Average gate power dissipation 1W G(AV) C T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical Characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Value Unit MIN. 3.5 I mA GT V = 12 V R = 33 MAX. 35 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 75 mA H T I I = 1.2 x I MAX. 150 mA L G GT dV/dt V = 67% V Gate open T = 125 C MIN. 1000 V/s D DRM j V I = 80 A t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.85 V t0 j R Dynamic resistance T = 125 C MAX. 10 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 4 mA j Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (DC) 0.8 C/W th(j-c) R Junction to ambient (DC) 60 C/W th(j-a) 2/8 DocID6944 Rev 6

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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