VND10N06TR-E STMicroelectronics

VND10N06 VND10N06-1OMNIFE fully autoprotected Power MOSFET Features Max on-state resistance (per ch.) R 0.3 DS(on) 3 3 2 Current limitation (typ) I 10A lim 1 1 Drain-Source clamp voltage V 60V CLAMP DPAK IPAK TO-252 TO-251 Linear current limitation Thermal shutdown Description Short circuit protection The VND10N06 and VND10N06-1 are monolithic Integrated clamp devices designed in STMicroelectronics VIPower Low current drawn from input pin M0-2 technology, intended for replacement of Logic level input threshold standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear ESD protection current limitation and overvoltage clamp protect Schmitt trigger on input the chip in harsh environments. High noise immunity Table 1. Device summary Order codes Package Tube Tape and reel DPAK VND10N06 VND10N06TR IPAK VND10N06-1 September 2013 Rev 4 1/25 www.st.com 25Contents VND10N06 / VND10N06-1 Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 6 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 12 3 Protection features . 16 4 Thermal data 17 5 Package and packing information . 18 5.1 ECOPACK packages . 18 5.2 DPAK mechanical data . 18 5.3 IPAK mechanical data . 20 5.4 DPAK packing information 21 5.5 IPAK packing information . 23 6 Revision history . 24 2/25