VNLD5090TR-E STMicroelectronics

VNLD5090-E OMNIFET III fully protected low-side driver for automotive applications Datasheet - production data Description The VNLD5090-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from SO-8 overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the Features device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the Type V R I clamp DS(on) D device to recover normal operation as soon as a VNLD5090-E 41 V 90 m 25 A fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off. AEC-Q100 qualified Drain current: 13 A ESD protection Overvoltage clamp Thermal shutdown Current and power limitation Very low standby current Very low electromagnetic susceptibility In compliance with the 2002/95/EC European directive Table 1. Devices summary Order codes Package Tube Tape and reel SO-8 VNLD5090-E VNLD5090TR-E October 2017 DocID023206 Rev 5 1/20 This is information on a product in full production. www.st.comContents VNLD5090-E Contents 1 Block diagrams and pins configurations 5 2 Electical specifications . 7 2.1 Absolute maximum ratings . 7 2.2 Thermal data . 7 2.3 Electrical characteristics . 8 3 Application information . 11 3.1 MCU I/O protection 11 4 Package and PC board thermal data . 13 4.1 SO-8 thermal data 13 5 Package and packing information . 16 16 5.1 ECOPACK 5.2 SO-8 mechanical data . 16 5.3 SO-8 packing information . 18 6 Revision history . 19 2/20 DocID023206 Rev 5