VNP20N07-E STMicroelectronics

VNP20N07OMNIFE: FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP20N07 70 V 0.05 20 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION tation and overvoltage clamp protect the chip The VNP20N07 is a monolithic device made in harsh enviroments. using STMicroelectronics VIPower Technology, Fault feedback can be detected by monitoring the intended for replacement of standard power voltage at the input pin. MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- BLOCK DIAGRAM 1/11 September 2013VNP20N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit V Drain-source Voltage (V = 0) Internally Clamped V DS in V Input Voltage 18 V in I Drain Current Internally Limited A D I Reverse DC Output Current -28 A R V Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V esd o P Total Dissipation at T = 25 C83 W tot c o T Operating Junction Temperature Internally Limited C j o T Case Operating Temperature Internally Limited C c o T Storage Temperature -55 to 150 C stg THERMAL DATA o R Thermal Resistance Junction-case Max 1.5 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source Clamp I = 200 mA V = 0 607080 V CLAMP D in Voltage V Drain-source Clamp I = 2 mA V = 0 55 V CLTH D in Threshold Voltage VINCL Input-Source Reverse Iin = -1 mA -1 -0.3 V Clamp Voltage I Zero Input Voltage V = 13 V V = 0 50 A DSS DS in Drain Current (V = 0) V = 25 V V = 0 200 A in DS in I Supply Current from V = 0 V V = 10 V 250 500 A ISS DS in Input Pin ON (* ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Input Threshold V = V I + I = 1 mA 0.8 3 V IN(th) DS in D in Voltage R Static Drain-source On V = 10 V I = 10 A 0.05 DS(on) in D Resistance V = 5 V I = 10 A 0.07 in D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (* ) Forward V = 13 V I = 10 A 13 17 S fs DS D Transconductance C Output Capacitance V = 13 V f = 1 MHz V = 0 500 800 pF oss DS in 2/11