X0202NA 1BA2 STMicroelectronics

X0202NA 1BA2 electronic component of STMicroelectronics
X0202NA 1BA2 STMicroelectronics
X0202NA 1BA2 SCRs
X0202NA 1BA2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of X0202NA 1BA2 SCRs across the USA, India, Europe, Australia, and various other global locations. X0202NA 1BA2 SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. X0202NA 1BA2
Manufacturer: STMicroelectronics
Category: SCRs
Description: SCRs 1.25 Amp 800 Volt
Datasheet: X0202NA 1BA2 Datasheet (PDF)
Price (USD)
5000: USD 0.3767 ea
Line Total: USD 1883.5 
Availability : 0
  
QtyUnit Price
5000$ 0.3767
5000$ 0.3476

Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 5000
Multiples : 1
QtyUnit Price
5000$ 0.3767
5000$ 0.3476


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3442
5000$ 0.3442


Availability 0
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2783
10$ 0.8576
25$ 0.7819
100$ 0.6421


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 25
Multiples : 25
QtyUnit Price
25$ 0.5288

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the X0202NA 1BA2 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the X0202NA 1BA2 and other electronic components in the SCRs category and beyond.

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X02 1.25 A sensitive gate SCR Features A on-state rms current: 1.25 A repetitive peak off-state voltage: 600 V and G 800 V K gate triggering current: 50 and 200 A A Applications G A ground fault circuit interrupters A G K K overvoltage crowbar protection in power supplies SOT-223 TO-92 X02xxN X02xxA capacitive ignition circuits Description A The X02 SCR can be used as the on/off function K in applications where topology does not offer high current for gate triggering. G This device is optimized in forward voltage drop SMBflat-3L X0202NUF and inrush current capabilities for reduced power losses and high reliability in harsh environments. Table 1. Device summary Voltage Order code Sensitivity A Package 600 V 800 V X0202MA Y 200 TO-92 X0202MN Y 200 SOT-223 X0202NA Y 200 TO-92 X0202NN Y 200 SOT-223 X0205MA Y 50 TO-92 X0205NA Y 50 TO-92 X0202NUF Y 200 SMBflat-3L January 2011 Doc ID 7480 Rev 4 1/11 www.st.com 11 Characteristics X02 1 Characteristics Table 2. Absolute ratings (limiting values, T = 25 C unless otherwise specified) J Symbol Parameter Value Unit TO-92 T = 63 C L I On-state rms current (180 Conduction angle) SOT-223 T = 99 C 1.25 A T(RMS) tab SMBflat-3L T = 111 C tab TO-92 T = 63 C L IT Average on-state current (180 Conduction angle) SOT-223 T = 99 C 0.8 A (AV) tab SMBflat-3L T = 111 C tab t = 8.3 ms 25 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 22.5 p 2 ItI t Value for fusing t = 10 ms T = 25 C 2.5 A s p j Critical rate of rise of on-state current di/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 1.2 A GM p j P Average gate power dissipation T = 125 C 0.2 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 3. Electrical characteristics (T = 25 C unless otherwise specified) J Symbol Test conditions X0202 X0205 Unit Min. 20 I A GT V = 12 V, R = 140 Max. 200 50 D L V Max. 0.8 V GT V V = V R = 3.3 k , R = 1 k T = 125 C Min. 0.1 V GD D DRM, L GK j V I = 10 A Min. 8 V RG RG I I = 50 mA, R = 1 k Max. 5 mA H T GK I I = 1 mA, R = 1 k Max. 6 mA L G GK dV/dt V = 67% V R = 1 k T = 110 C Min. 10 15 V/s D DRM, GK j Table 4. Static electrical characteristics Symbol Test conditions X0202 X0205 Unit V I = 2.5 A, t = 380 s T = 25 C 1.45 V TM TM p j V Threshold voltage 0.9 V TO T = 125 C j R Dynamic resistance Max. 200 m d T = 25 C 5 A j I I V = V R = 1 k DRM RRM DRM RRM, GK A T = 125 C 500 j 2/11 Doc ID 7480 Rev 4

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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