1N4148
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Vishay Semiconductors
Small Signal Fast Switching Diodes
FEATURES
Silicon epitaxial planar diode
Electrically equivalent diodes:
1N4148 - 1N914
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Extreme fast switches
MECHANICAL DATA
Case: DO-35
Weight: approx. 105 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
1N4148 1N4148-TAP or 1N4148TR V4148 Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V 100 V
RRM
Reverse voltage V 75 V
R
Peak forward surge current t = 1 s I 2A
p FSM
Repetitive peak forward current I 500 mA
FRM
Forward continuous current I 300 mA
F
Average forward current V = 0 I 150 mA
R F(AV)
l = 4 mm, T = 45 C P 440 mW
L tot
Power dissipation
l = 4 mm, T 25 C P 500 mW
L tot
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W
L thJA
Junction temperature T 175 C
j
Storage temperature range T - 65 to + 150 C
stg
Rev. 1.3, 04-Dec-13 Document Number: 81857
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?910001N4148
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I = 10 mA V 1V
F F
V = 20 V I 25 nA
R R
Reverse current V = 20 V, T = 150 C I 50 A
R j R
V = 75 V I 5A
R R
I = 100 A, t /T = 0.01,
R p
Breakdown voltage V 100 V
(BR)
t = 0.3 ms
p
V = 0 V, f = 1 MHz,
R
Diode capacitance C 4pF
D
V = 50 mV
HF
Rectification effiency V = 2 V, f = 100 MHz 45 %
HF r
I = I = 10 mA,
F R
t 8ns
rr
i = 1 mA
R
Reverse recovery time
I = 10 mA, V = 6 V,
F R
t 4ns
rr
i = 0.1 x I , R = 100
R R L
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
1000
1.2
1.0
I = 100 mA
F
T = 25 C
j
0.8 100
10 mA
0.6
1m A
Scattering Limit
10
0.4
0.1 mA
0.2
1
0
- 30 0 30 60 90 120 1 100 10
94 9098 V - Reverse Voltage (V)
94 9169 T - Junction Temperature (C)
j R
Fig. 1 - Forward Voltage vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse Voltage
1000
1N4148
100
Scattering Limit
10
1
T = 25 C
J
0.1
0 0.4 0.8 1.2 1.6 2.0
94 9170 V - Forward Voltage (V)
F
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.3, 04-Dec-13 Document Number: 81857
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current (mA) V - Forward Voltage (V)
F
F
I - Reverse Current (nA)
R