Product Information

1N4148WS-G RVG

1N4148WS-G RVG electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching SOD-323, 100V, 0.15A, Switching Diode & Array
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1552 ea
Line Total: USD 0.16

26914 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
26914 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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1N4148WS-G RVG
Taiwan Semiconductor

1 : USD 0.1552
10 : USD 0.1081
100 : USD 0.0471
1000 : USD 0.0311
3000 : USD 0.0253
9000 : USD 0.0219
24000 : USD 0.0207
45000 : USD 0.0184
99000 : USD 0.0161

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

1N4148WS-G Taiwan Semiconductor Small Signal Product Switching Diode FEATURES - Surface Mounted Device - Fast Switching Speed - Moisture sensitivity level (MSL): 1 - Pb free and RoHS compliant SOD-323 MECHANICAL DATA - Case: Bend lead SOD-323 package - High temperature soldering guaranteed: 260C/10s - Weight: 4.5mg (approximately) - Marking: T4 APPLICATION General purpose switching application MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT V Peak reverse voltage 100 V RM DC blocking voltage V 75 V R Non-repettive peak forward current I 300 mA FM Average rectified output current I 150 mA O I Peak forward surge current t=1s 2.0 A FSM P 200 Power dissipation mW D Junction temperature T 150 C J Storage temperature T - 55 to +150 C STG PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT I = 1mA V 0.715 V F F1 V I = 10mA 0.885 V F2 F Forward voltage I = 50mA V 1V F F3 V I = 150mA 1.25 V F4 F I V =75V R 1 A R1 Reverse leakage current V =20V I 25 nA R R2 Capacitance between terminals C V =0V , f=1MHz 2pF T R I =I =10mA, I =0.1 I , F R rr R Reverse recovery time t 4.0 ns rr R =100 L Version: B141N4148WS-G Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Typical Reverse Characteristics Fig.2 Typical Forward Characteristics 1000 1000 Ta=100C 100 Ta=100C 100 10 Ta=25C 1 Ta=25C 10 0.1 1 0.01 0 20 406080 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage (mV) Reverse Voltage (V) Fig. 3 Power Derating Curve Fig. 4 Typical Capacitance Characteristics 300 1.2 T = 25 250 f = 1 MHz 200 150 1 100 50 0 0.8 0 25 50 75 100 125 150 0 5 10 15 20 Reverse Voltage (V) Ambient Temperature (C) Version: B14 Power Disspation (mW) Reverse Current (mA) Forward Current (mA) Junction Capacitance (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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