1N5408G-K A0G Taiwan Semiconductor

1N5408G-K A0G electronic component of Taiwan Semiconductor
1N5408G-K A0G Taiwan Semiconductor
1N5408G-K A0G Diodes - General Purpose, Power, Switching
1N5408G-K A0G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of 1N5408G-K A0G Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N5408G-K A0G Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. 1N5408G-K A0G
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose DO-201AD RoHS
Datasheet: 1N5408G-K A0G Datasheet (PDF)
Price (USD)
10000: USD 0.0935 ea
Line Total: USD 935 
Availability : 0
  
QtyUnit Price
10000$ 0.0935
25000$ 0.0883
50000$ 0.083

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1719
50$ 0.1423
150$ 0.1209
500$ 0.1033
2500$ 0.1003
5000$ 0.0988


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0935
25000$ 0.0883
50000$ 0.083

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N5408G-K A0G from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5408G-K A0G and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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4 1N5400G-K - 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Glass Passivated Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT High current capability, Low V F I 3 A F(AV) High reliability V 50 - 1000 V RRM High surge current capability Low power loss, high efficiency I 125 A FSM Compliant to RoHS Directive 2011/65/EU and T 150 C J MAX in accordance to WEEE 2002/96/EC Package DO-201AD Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS High frequency rectification Freewheeling application Switching mode converters and inverters in computer and telecommunication. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94V-0 flammability rating Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.2 g (approximately) DO-201AD ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 PARAMETER SYMBOL UNIT G-K G-K G-K G-K G-K G-K G-K Marking code on the device 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G Repetitive peak reverse V 50 100 200 400 600 800 1000 V RRM voltage Reverse voltage, total rms V 35 70 140 280 420 560 700 V R(RMS) value Maximum DC blocking V 50 100 200 400 600 800 1000 V DC voltage Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 125 A FSM superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:B1705 4 1N5400G-K - 1N5408G-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 45 C/W JA Junction-to-case thermal resistance R 15 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 1N5400G-K - 1.1 V 1N5401G-K 1N5402G-K (1) Forward voltage per diode 1N5404G-K I = 3A,T = 25C V F J F - 1.0 1N5406G-K V 1N5407G-K 1N5408G-K - 5 A T = 25C J (2) Reverse current rated V per diode I R R - 100 A T = 125C J 1 MHz, V =4.0V 25 - Junction capacitance C pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PACKING CODE PART NO. PACKING CODE PACKAGE PACKING SUFFIX A0 DO-201AD 500 / Ammo box 1N540xG-K R0 G DO-201AD 1,250 / 13 Paper reel (Note 1, 2) B0 DO-201AD 500 / Bulk packing Notes: 1. defines voltage from 50V (1N5400G-K) to 1000V (1N5408G-K) 2. Whole series with green compound (halogen-free) EXAMPLE P/N PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX 1N5400G-K A0G 1N5400G-K A0 G Green compound 2 Version:B1705

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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