Product Information

1SS133M R0

1SS133M R0 electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching DO-34 90V 0.15A Swit ching Diode & Array
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1955 ea
Line Total: USD 0.2

19275 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
19139 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

1SS133M R0
Taiwan Semiconductor

1 : USD 0.1955
10 : USD 0.1725
100 : USD 0.092
1000 : USD 0.0391
2500 : USD 0.0333
10000 : USD 0.0265
20000 : USD 0.023
50000 : USD 0.0207
100000 : USD 0.0195

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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Additional Infomation About Product

1SS133M Taiwan Semiconductor Small Signal Product 300mW, Hermetically Sealed Glass Switching Diodes FEATURES - Fast switching device (t < 4.0 ns) rr - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - RoHS compliant DO-34 - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band - Marking code: 133 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 300 mW D Working Inverse Voltage W 90 V IV Average Rectified Current I 150 mA O Non-Repetitive Peak Forward Current I 450 mA FM I Peak Forward Surge Current 2 A FSURGE o Operating Junction Temperature T + 175 J C o Storage Temperature Range T -65 to +200 STG C PARAMETER SYMBOL MIN MAX UNIT I =500nA Breakdown Voltage B 80 -- V R V Forward Voltage I =100mA V 1.2 V F F V =80V Reverse Leakage Current I 500 R nA R V =0, f=1.0MHz Junction Capacitance C -- 4.0 pF R j Reverse Recovery Time (Note 1) t -- 4.0 ns rr Notes: 1. Reverse Recovery Test Conditions: I =I =10mA, R =100, I =1mA F R L RR Document Number: DS S1403003 Version: C151SS133M Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics 100 10000 o T =100 C A 1000 o T =75 C A 10 o T =50 C A 100 o T =125 C A o T =75 C A o T =25 C 1 A o T =25 C o A T =-25 C A 10 1 0. 1 0 20406080 100 120 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 Forward Voltage : V (V) Reverse Voltage : V (V) F R Fig. 4 Reverse Recovery Time Characteristics Fig. 3 Capacitance Between Terminals Characteristics 5 3. 0 V = 6 V R f = 1 MHz I = 1/10 I rr R 2. 5 4 2. 0 3 1. 5 2 1. 0 1 0. 5 0 0. 0 04 8 12 16 20 0 5 10 15 20 25 30 Forward Current : I (mA) Reverse Voltage : V (V) F R Fig. 5 Surge Current Characteristics Fig. 6 Reverse Recovery Time ( trr ) Measurement Circuit 100 10 1 0. 1 1 10 100 1000 10000 Pulse Width : Tw (ms) Document Number: DS S1403003 Version: C15 Capacitance Between Terminals : Forward Current : I (mA) F Surge Current : I (A) C (pF) SURGE T Reverse Current : I (nA) R Reverse Recovery Time : tr (ns)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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