Product Information

B0540W

B0540W electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Schottky Diodes & Rectifiers 40 Volt 0.5 Amp 5.5 Amp IFSM
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0751 ea
Line Total: USD 225.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 3000
Multiples : 3000

Stock Image

B0540W
Taiwan Semiconductor

3000 : USD 0.0751
9000 : USD 0.0611
24000 : USD 0.0598

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

B0520LW,B0530W,B0540W Taiwan Semiconductor Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) under plate - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-123 MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL B0520LW B0530W B0540W UNIT Power Dissipation P 410 mW D Repetitive Peak Reverse Voltage V 20 30 40 V RRM Reverse Voltage V 14 21 28 V R Mean Forward Current T =100C (Lead Temperature) I 500 mA L O Non-Repetitive Peak Forward Surge Current (Note 1) I 5.5 A FSM R Thermal Resistance (Junction to Ambient) (Note 2) 244 C/W J A T , T Junction and Storage Temperature Range -55 to +125 C J STG Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load Notes: 2. Valid provided that electrodes are kept at ambient temperature PARAMETER B0520LW B0530W B0540W SYMBOL UNIT I =250A 20 - - R Reverse Breakdown Voltage I =130A V - 30 - V (BR) R (Minimum Value) - - 40 I =20A R I =100mA 0.300 0.375 - F Forward Voltage I =500mA T = 25C V 0.385 0.430 0.510 V J F F (Maximum Value) I =1000mA - - 0.620 F V = 10V 75 - - R V = 15V - 20 - R Reverse Leakage Current T = 25C I V = 20V 250 - 10 A R J R (Maximum Value) V = 30V - 130 - R V = 40V - - 20 R Junction Capacitance V = 0 V f=1.0MHz C 170 pF R J Version: I1601B0520LW,B0530W,B0540W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 2 Forward Current Derating Curve Fig.1 Typical Forward Characteristics 0.75 10 B0540W 0.5 1 B0530W B0520LW 0.25 0.1 Fig. 4 0 0.01 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 T , Lead Temperature ( C) V Forward Voltage (V) L F Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve Fig. 3 0 1000 450 400 350 100 300 250 200 10 150 100 50 1 0 0 5 10 15 20 25 0 20 40 60 80 100 120 140 Reverse Voltage (V) Ambient Temperature (C) Version: I1601 I Forward Current (A) Power Dissipation (mW) F I Mean Forward Current (A) O Junction Capacitance (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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