Product Information

BAV99S

BAV99S electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Diodes - General Purpose, Power, Switching 1500W 20V 5% UNI TRANSZORB-TVS
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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BAV99S
Taiwan Semiconductor

1 : USD 0.5069
10 : USD 0.3667
100 : USD 0.2134
1000 : USD 0.0907
3000 : USD 0.0785
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Frequency Range
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

BAW56, BAV70, BAV99 Taiwan Semiconductor 200mA, 70V SMD Switching Diode FEATURES KEY PARAMETERS Fast switching speed PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F Moisture sensitivity level: level 1, per J-STD-020 V 70 V RRM RoHS Compliant I 2 A Halogen-free according to IEC 61249-2-21 FSM V at I =150mA 1.25 V F F T 150 C J MAX APPLICATIONS Package SOT-23 Switching mode power supply (SMPS) MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 0.5 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAW56 BAV70 BAV99 UNIT Marking code on the device A1 A4 A7 Power dissipation P 225 mW D Repetitive peak reverse voltage V 70 V RRM Repetitive peak forward current I 450 mA FRM Forward current I 200 mA F t = 1s 0.5 Non-Repetitive peak I A FSM forward surge current t = 1s 2 Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: I2001 BAW56, BAV70, BAV99 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 556 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT 1.00 I = 50mA, T = 25C F J (1) - Forward voltage per diode V V F 1.25 I = 150mA, T = 25C F J 70 - Reverse voltage I = 100 A, T = 25C V V R J R Reverse current rated V R - 2.5 V = 70 V, T = 25C I A R J R (2) per diode - 2 BAW56, BAV70 Junction f=1 MHz, V =1V C pF R J capacitance - 1.5 BAV99 I =I = 10mA , R = 100, F R L - 6 Reverse recovery time t ns rr I = 1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAxxx RF SOT-23 3K / 7 Reel BAxxx RFG SOT-23 3K / 7 Reel BAxxx-B0 RF SOT-23 3K / 7 Reel BAxxx-B0 RFG SOT-23 3K / 7 Reel BAxxx-D0 RF SOT-23 3K / 7 Reel BAxxx-D0 RFG SOT-23 3K / 7 Reel Notes: 1.x is device code fromW56 toV99 2. G means green compound (halogen free) 2 Version: I2001

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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