BAW27 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES Silicon epitaxial planar diode Low forward voltage drop High forward current capability AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS High speed switch and general purpose use in computer DESIGN SUPPORT TOOLS click logo to get started and industrial applications Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAW27 BAW27-TR or BAW27-TAP BAW27 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 75 V RRM Reverse voltage V 60 V R Peak forward surge current t = 1 s I 4A p FSM Forward continuous current I 600 mA F Average forward current V = 0 I 300 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 1.8, 13-Jul-17 Document Number: 85548 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAW27 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 0.670 0.750 V F F I = 50 mA V 800 850 mV F F Forward voltage I = 200 mA V 950 1000 mV F F I = 400 mA V 1120 1250 mV F F V = 60 V I 100 nA R R Reverse current V = 60 V, T = 100 C I 50 A R j R I = 5 A, t /T = 0.01, R p Breakdown voltage V 75 V (BR) t = 0.3 ms p V = 0 V, f = 1 MHz, R Diode capacitance C 4pF D V = 50 mV HF I = I = 10 mA, F R Reverse recovery time t 6ns rr i = 0.1 x I R R PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 13-Jul-17 Document Number: 85548 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0.6 max. 0.024 0.4 min. 0.015 1.7 0.067 1.3 0.050