Product Information

BYG20J M2

BYG20J M2 electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 4A 50V-1000V Glass Pass Brdg Rect
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15000: USD 0.0932 ea
Line Total: USD 1398

0 - Global Stock
MOQ: 15000  Multiples: 15000
Pack Size: 15000

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0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 15000
Multiples : 15000

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BYG20J M2
Taiwan Semiconductor

15000 : USD 0.0932
22500 : USD 0.0859
45000 : USD 0.0839

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Additional Infomation About Product

creat by ART BYG20D - BYG20J 1.5 AMPS High Efficient Surface Mount Rectifiers SMA/DO-214AC Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.064 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) R3 R3G BYG20D SMA 1.8K / 7 REEL Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. BYG20D BYG20G BYG20J Symbol Unit Parameter Maximum Repetitive Peak Reverse Voltage V 200 400 600 V RRM Maximum RMS Voltage V 140 280 420 V RMS Maximum DC Blocking Voltage V 200 400 600 V DC Maximum Average Forward Rectified Current I 1.5 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 30 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous 1.0 A 1.3 V V F Forward Voltage (Note 1) 1.5 A 1.4 Maximum Reverse Current Rated VR T =25 1 A I uA R T =100 10 A Pulse energy in avalanche mode, non repetitive E 20 mJ RSM (Inductive load switch off ) T =25, L=120mH A Maximum Reverse Recovery Time (Note 2) 75 Trr nS O Typical Thermal Resistance R 100 jA C/W O Operating Temperature Range T - 55 to + 150 J C O T Storage Temperature Range - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Version:B13RATINGS AND CHARACTERISTIC CURVES (BYG20D THRU BYG20J) FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 100 2 1.5 10 1 1 RESISTIVE OR 0.5 INDUCTIVE LOAD TA=125 0 0. 1 0 20 406080 100 120 140 160 o LEAD TEMPERATURE ( C) 0. 01 TA=25 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 70 8.3mS Single Half Sine Wave 0. 001 60 JEDEC Method 0 20 40 60 80 100 120 140 50 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 40 30 FIG. 5 TYPICAL FORWARD CHARACTERISTICS 20 10 10 TA=25 TA=25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE 175 1 TA=25 150 125 100 75 50 25 0. 1 0 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 0. 1 1 10 100 1000 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:B13 CAPACITANCE (pF) AVERAGE FORWARD PEAK FORWARD SURGE URRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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